Budapest University of Technology and Economics, Faculty of Electrical Engineering and Informatics

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    Microelectronics

    A tantárgy neve magyarul / Name of the subject in Hungarian: Mikroelektronika

    Last updated: 2023. december 1.

    Budapest University of Technology and Economics
    Faculty of Electrical Engineering and Informatics     		B.Sc.
    Course ID Semester Assessment Credit Tantárgyfélév
    VIEEAB01 3 2/0/2/v 5  
    3. Course coordinator and department Dr. Bognár György,
    4. Instructors Dr. Szabó Péter Gábor, egyetemi docens, Elektronikus Eszközök Tanszéke
    Dr. Poppe András, egyetemi tanár, Elektronikus Eszközök Tanszéke
    5. Required knowledge Materials in Electronics, Digital Design 1, Digital Design 2, Physics 2, Signals and Systems 1
    6. Pre-requisites
    Kötelező:
    NEM ( TárgyTeljesítve("BMEVIEEAB00") ) ÉS

    (Kepzes("5N-A7") VAGY
    Kepzes("5N-A7H") VAGY
    Kepzes("5NAA7"))

    A fenti forma a Neptun sajátja, ezen technikai okokból nem változtattunk.

    A kötelező előtanulmányi rend az adott szak honlapján és képzési programjában található.

    Ajánlott:
    Signature in Materials in Electronics subject
    7. Objectives, learning outcomes and obtained knowledge High computing power data centres, advanced smart devices, basic devices for renewable energy production, drive control for electric cars are all unimaginable without the highly complex integrated circuits or special discrete semiconductor devices they contain. Thanks to the continuous development of integration and the digitalisation of all aspects of life, every electrical engineer must have a basic knowledge of the design and operation of these devices and equipment, and of the components and circuits that can be implemented in integrated circuits made using different manufacturing technologies. In addition, they should also be familiar with the basic methodology and steps involved in the design of integrated circuits, at least to the level required to work with an IC design engineer. The course is designed to provide an understanding of the relationship between abstract electronic operation and physical reality. The physical operation of the main integrated circuit elements (diode, transistor, etc.) is discussed in detail. Emphasis is placed on related practical skills in the context of computer and semiconductor laboratory exercises
    8. Synopsis
    1. An overview of microelectronics as one of the fastest growing industries. The role, place and scope of microelectronics. Tasks of the microelectronics design engineer. Basic concepts of microelectronics and microelectronics technology: minimum feature size (MFS), wafer, chip, die, wafer diameter, single crystal rod, planar technology, pitch size, etc. 3D realisation of transistors (FinFet, GAA, nanosheet transistor designs). The concepts of layout and mask, core and pad-ring. Basics of cleanroom. Photolithography (illumination, masking). Evolution of IC packaging in the last decades: More than Moore's law, 2.5D and 3D packaging (SiP, SoP, stacked die, CSP, etc.). The main parameters of the physical implementations: channel width, wafer size, number of transistors integrated on a wafer, clock frequency, dissipation and integrated cores/functions in the recent years.
    2. IC fab: main areas (clean room, sluice, service room, etc.), state-of-the-art production lines, geographical distribution of semiconductor companies and production capacity. Development trends, Moore's prediction as a business trend and its impact on microelectronics manufacturing technologies. Concepts specific microelectronics industry: roadmap, red brick wall, technology node, etc. Dissipation density limit, understanding suitable cooling device designs, integrated microscale cooling devices, liquid and microchannel cooling issues and opportunities.
    3. The concepts of generation and recombination. Concentration of charge carriers in undoped (intrinsic) and doped semiconductors, determination of charge carrier concentrations (majority, minority) and their temperature dependence, concept of Fermi level.
    4. Currents in semiconductors: drift and diffusion current, mobility and diffusion constant, Einstein correlation, lifetime and generation/recombination rate. Continuity and diffusion equations. Solution of diffusion equation using a typical example frequently encountered in semiconductor devices. Determination of diffusion length.
    5. The diode as the simplest semiconductor device. Design of planar diodes, concept of dopant profile. Operation of pn junction, electrostatic conditions in pn junction. Concept of depleted layer, determination of its width. Concept and magnitude of diffusion potential. Detailed explanation of the operation of the pn junction in the forward bias region. Determination of ideal diode characteristics.
    6. Understanding of diode secondary phenomena: generation and recombination currents, high current density phenomena, breakdown phenomena (ionisation and tunnelling effect), series resistance, space charge and diffusion capacitance. Closed-loop operation of the pn junction. Temperature dependence of the electrical behaviour of the pn junction.
    7. Design of planar bipolar transistors (discrete and integrated circuit design), conditions for efficient transistor operation, explanation of transistor effect, injection and transport efficiency, determination of high signal current gain, calculation of insertion loss and efficiency. Homogeneous and inhomogeneous base bipolar transistor structures. Potential relations in bipolar transistor.
    8. The concepts of working point and minor operation. Determination of the differential resistance of the pn junction. Modelling diodes and bipolar transistors for circuit simulation (SPICE): model topology, model equation, model parameters. Common-base emitter switching operation. Bipolar transistor modes and their modelling for SPICE-like circuit simulation: Ebers-Moll model, low-signal (physical π) models, low-signal calculations. The role of bipolar transistors in today's ICs (e.g. BiCMOS circuits).
    9. Types of field-effect transistors: JFET and MOSFET devices. The essence of unipolar operation, the physical basis of operation. Introduction to the family of field-effect transistors. Theoretical structure, characteristics, operating ranges of JFETs, the concept of reverse bias voltage, definition of characteristic equation.
    10. Low-signal parameters and equivalent circuit diagrams of JFETs and MOSFETs; the concept of transconductance, voltage gain determination (for common-source circuits). Basic JFET connections and their characteristics. Comparison of JFET devices with bipolar and MOS transistors. MOSFET device architecture (discharge/growth, n/p channel), their basic operation, comparison of metal and poly-silicon gate electrode designs. Steps of a simple MOS fabrication technology, mask sets.
    11. Surface phenomena in MOS capacitance: discharge, accumulation, inversion. Applications of MOS capacitance: construction, operation and evolution of CCD and CMOS image sensors in the last decades. Modern image sensing devices (exmor, isocell, BSI, dual-pixel, pixel binning, HDR, etc.).
    12. Characteristics, threshold voltage, capacitance of MOS transistors. Basics of SPICE simulation models of MOS transistors (topology, main parameters). Secondary effects in MOS transistors. Power transistors: power FETs, thermal runaway, SOA concept.  IGBT devices structure, operation, parasitic elements, characteristics.
    13. The concept and relationship between microelectronic manufacturing technology and circuit switching technology. From nMOS to the logic circuit families used in modern system chip devices (CMOS, SCL, BiCMOS, etc.). The simplest nMOS digital circuits (inverters, NAND/NOR logic gates) and their CMOS variants (circuit schematic and layout plan). Proportional size reduction and its effects, Dennard's law. Other global characteristics of digital integrated circuit cores: timing parameters, load capacitances, IC wiring properties. CMOS inverter design, characteristics (noise immunity, signal regeneration capability, comparator voltage, signal propagation). CMOS circuit power consumption, its components, frequency dependence. Construction and operation of static and dynamic MOS logic circuits, comparison.
    14. Special purpose pn transitions: photodiodes, solar cells, light emitting diodes (LEDs). Their construction, operation, implementation technology and related basic concepts. MEMS (micro-electromechanical systems) devices. Effects of size reduction, typical implementations and designs (trenches, diaphragm, cantilever, bridge, micro spring, comb drive, microchannels, etc.). Block and surface micromachining technologies. Compatibility issues with CMOS technology. Understanding typical sensor applications. Modelling of the operation of such devices, their substitution diagrams.
    The aim of the laboratory sessions is to provide practical knowledge of CAD design and verification methods used in microelectronics, as well as in semiconductor technology. Tasks to be performed during the laboratory exercises:
    1.    Basic semiconductor fabrication technology, semiconductor device testing methods
    • Introduction to the basic materials used in semiconductor technology (electrical, thermal, mechanical properties).
    • Familiarisation with methods of qualification of semiconductor materials.
    • Introduction to basic microelectronic technological processes, demonstration of some technological processes.
    • Introduction to clean room and clean room work.
    • Reverse engineering of integrated circuits based on bipolar and CMOS technology using optical microscopy.
    2.    Elementary steps and methods of IC design and verification
    • SPICE simulation of circuits given by wiring diagrams, determination of the main operational characteristics by simulation (DC, transient).
    • SPICE simulation of a selected CMOS circuit (DC, transient) and investigation of the effect of ambient temperature variation (parametric simulation).
    • Investigation of a MOS amplifier circuit, running different SPICE simulations (DC, AC, transient), learning about their applications.
    • HDL (hardware description language) for designing digital synchronous networks, designing basic circuits.
    • Designing a more complex digital circuit in hardware description language, checking the design (verification)
    • Implement the circuit designed in the previous steps using circuit synthesis and test the designed circuit in an actual FPGA environment.
    3.    Thermal design methodology for integrated circuits
    • Thermal simulation of electronic systems, circuits, IC boards: study of layout design, thermal effects of packaging and the effects of different cooling methods.
    • Thermal compact modeling of the heat conduction path of integrated circuits, sensor structures, circuit packages.
    • Running thermal simulations (DC, AC, Transient) for integrated circuit amplifier and mounted circuit substrate.


    9. Method of instruction The theoretical material is presented in lectures of 2 hours/week. The lectures will be continuously illustrated with projected images of microelectronic structures (microscopic, electron microscopic) and on-site measurements and illustrative models. The performance of typical computational tasks will be illustrated by examples included in the lectures.
    The course includes a laboratory exercise (2 hours/week). Students will be introduced to semiconductor technologies in the department's semiconductor and materials testing laboratories, thermal measurements in the thermal laboratory, simulation and design exercises in the computer laboratory. During these exercises, students are given individual assignments. Attendance of laboratory exercises is compulsory.

    10. Assessment

    Lecturing period

    A condition for obtaining a signature:

    -       Successful completion of the laboratory exercises for the subject and submission of the reports by the deadline. Absence from one of the required number of laboratory exercises during the semester is allowed and one additional absence may be accepted. Preparation for the practical sessions will be checked before the laboratory work begins. Students whose preparation is unsatisfactory will not be allowed to participate in the laboratory exercise.

    -       A midterm will be written once during the term, at the time specified in the course load chart. To be eligible for the exam, you must have passed this test with at least a satisfactory (2)

    Exam period

    Exam:

    -       To pass the exam, you must have obtained a signature during the semester or a signature obtained in previous years is also acceptable.

    -       All students must take an exam during the examination period. The examination consists of a compulsory written part and an optional oral part. The written part is compulsory for all students.

    -       Students take the written examination in the form of an attendance test in the Faculty's computer-based teaching rooms, by solving the examination questions in the Faculty's Moodle e-learning system.

    -       In the oral examination, all students who have achieved at least a satisfactory level have the possibility to improve one mark. Attendance at the oral examination is compulsory in order to obtain a good or distinction mark. In the oral examination, students are randomly given one item from a pre-assigned list.
    11. Recaps During the lecturing period of the semester, we provide the opportunity to retake one laboratory session. During the lecturing period / retake period, we provide the opportunity to retake the midterm. There are no other retake options .
    12. Consultations Consultations on the subject will be held on request.
    13. References, textbooks and resources
    • Electronic notes (available on the Faculty Moodle e-learning platformTanszéki elektronikus jegyzetek)
    • Harry J.M. Veendrick, „Nanometer CMOS ICs, from Basics to ASICs”, 2017, http://dx.doi.org/10.1007/978-3-319-47597-4

    14. Required learning hours and assignment
    Kontakt óra56
    Félévközi készülés órákra24
    Felkészülés zárthelyire30
    Házi feladat elkészítése 
    Kijelölt írásos tananyag elsajátítása 
    Vizsgafelkészülés40
    Összesen150
    15. Syllabus prepared by Dr. Bognár György, egyetemi docens, Elektronikus Eszközök Tanszéke
    Dr. Poppe András, egyetemi tanár, Elektronikus Eszközök Tanszéke
    Dr. Szabó Péter Gábor, egyetemi docens, Elektronikus Eszközök Tanszéke